? 2012 ixys corporation, all rights reserved IXGN100N170 ds100091a(01/12) sot-227b, minibloc g = gate, c = collector, e = emitter c either emitter terminal can be used as main or kelvin emitter g e c e c c e153432 e high voltage igbt v ces = 1700v i c90 = 95a v ce(sat) 3.0v symbol test conditions maximum ratings v ces t j = 25c to 150c 1700 v v cgr t j = 25c to 150c, r ge = 1m 1700 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 160 a i c90 t c = 90c 95 a i cm t c = 25c, 1ms 600 a ssoa v ge = 15v, t vj = 125c, r g = 1 i cm = 200 a (rbsoa) clamped inductive load @0.8 ? v ces t sc v ge = 15v, v ce = 1250v, t j = 125c 10 s (scsoa) r g = 10 , non repetitive p c t c = 25c 735 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60hz t = 1min 2500 v~ i isol 1ma t = 1s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.3/11.5 nm/lb.in. weight 30 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 3ma, v ge = 0v 1700 v v ge(th) i c = 8ma, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 50 a t j = 125 c 3 ma i ges v ce = 0v, v ge = 20v 200 na v ce(sat) i c = 100a, v ge = 15v, note 1 2.5 3.0 v features z optimized for low conduction and switching losses z isolation voltage 2500 v~ z short circuit capability z international standard package z high current handling capability advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z welding machines
ixys reserves the right to change limits, test conditions, and dimensions. IXGN100N170 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 sot-227b minibloc (ixgn) symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 36 64 s c ie s 9200 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 455 pf c res 150 pf q g 425 nc q ge i c = 100a, v ge = 15v, v ce = 0.5 ? v ces 65 nc q gc 186 nc t d(on) 35 ns t r 192 ns t d(off) 285 ns t f 395 ns t d(on) 35 ns t r 250 ns t d(off) 285 ns t f 435 ns r thjc 0.17 c/w r thcs 0.05 c/w resistive load, t j = 25c i c = 100a, v ge = 15v v ce = 0.5 ? v ces , r g = 1 resistive load, t j = 125c i c = 100a, v ge = 15v v ce = 0.5 ? v ces , r g = 1 note: 1. pulse test, t 300 s, duty cycle, d 2%.
? 2012 ixys corporation, all rights reserved IXGN100N170 fig. 1. output characteristics @ t j = 25oc 0 50 100 150 200 0 0.5 1 1.5 2 2.5 3 3.5 4 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 012345678910 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 3. output characteristics @ t j = 125oc 0 50 100 150 200 00.511.522.533.544.55 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 50a i c =200a i c = 100a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.5 2.5 3.5 4.5 5.5 6.5 5 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 200a t j = 25oc 100a 50a fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 v ge - volts i c - amperes t j = - 40oc 25oc 125oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGN100N170 fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 100 110 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 400 450 q g - nanocoulombs v ge - volts v ce = 850v i c = 100a i g = 10ma fig. 9. reverse-bias safe operating area 0 40 80 120 160 200 200 400 600 800 1000 1200 1400 1600 1800 v ce - volts i c - amperes t j = 125oc r g = 1 ? dv / dt < 10v / ns fig. 10. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 11. maximum transient thermal impedance 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2012 ixys corporation, all rights reserved IXGN100N170 fig. 13. resistive turn-on rise time vs. collector current 40 80 120 160 200 240 280 320 50 55 60 65 70 75 80 85 90 95 100 i c - amperes t r - nanoseconds r g = 1 ? , v ge = 15v v ce = 850v t j = 125oc t j = 25oc fig. 14. resistive turn-on switching times vs. gate resistance 50 100 150 200 250 300 350 400 450 12345678910 r g - ohms t r - nanoseconds 25 30 35 40 45 50 55 60 65 t d ( on ) - nanoseconds t r t d(on ) - - - - t j = 125oc, v ge = 15v v ce = 850v i c = 100a i c = 50a fig. 15. resistive turn-off switching times vs. junction temperature 200 300 400 500 600 700 800 900 1000 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 240 260 280 300 320 340 360 380 400 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v ge = 15v v ce = 850v i c = 100a i c = 50a fig. 16. resistive turn-off switching times vs. collector current 200 300 400 500 600 700 800 900 1000 50 55 60 65 70 75 80 85 90 95 100 i c - amperes t f - nanoseconds 260 280 300 320 340 360 380 400 420 t d ( off ) - nanoseconds t f t d(off ) - - - - r g = 1 ? , v ge = 15v v ce = 850v t j = 125oc t j = 25oc fig. 12. resistive turn-on rise time vs. junction temperature 40 80 120 160 200 240 280 320 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v ge = 15v v ce = 850v i c = 100a i c = 50a fig. 17. resistive turn-off switching times vs. gate resistance 300 400 500 600 700 800 900 1000 1100 12345678910 r g - ohms t f - nanoseconds 100 200 300 400 500 600 700 800 900 t d ( off ) - nanoseconds t f t d(off ) - - - - t j = 125oc, v ge = 15v v ce = 850v i c = 50a i c = 100a ixys ref: ixg_100n170(9p)01-26-12-a
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